View MJH6284_744512.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

IIIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I I II II IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII IIIII II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIII
* Similar to the Popular NPN 2N6282, 2N6283, 2N6284 and the PNP 2N6285, 2N6286, 2N6287 * Rugged RBSOA Characteristics * Monolithic Construction with Built-in Collector-Emitter Diode . . . designed for general-purpose amplifier and low-speed switching motor control applications.
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
Preferred devices are Motorola recommended choices for future use and best overall value.
PD , POWER DISSIPATION (WATTS)
Darlington Complementary Silicon Power Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Thermal Resistance, Junction to Case
Operating and Storage Junction Temperature Range
Total Device Dissipation @ TC = 25_C Derate above 25_C
Base Current
Collector Current -- Continuous Peak
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Rating
Characteristic
160
100
120
140
20
40
60
80
0
Symbol
TJ, Tstg
VCEO
0
VCB
VEB
PD
IC
IB
25
MJH6282 MJH6285
60
60
Symbol
50 75 100 125 150 TC, CASE TEMPERATURE (C)
Figure 1. Power Derating
RJC
- 65 to + 150
MJH6283 MJH6286
160 1.28
0.5
5.0
20 40
80
80
0.78
Max
MJH6284 MJH6287
100
100
_C/W
Watts
W/_C
Unit
175
Unit
Adc
Adc
Vdc
Vdc
Vdc
_C
200
DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80, 100 VOLTS 160 WATTS
MJH6282 MJH6283* MJH6284* PNP MJH6285 MJH6286* MJH6287 *
*Motorola Preferred Device
CASE 340D-01
Order this document by MJH6282/D
NPN
1
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I III I I I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII III I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII III I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
MJH6282 MJH6283 MJH6284 MJH6285 MJH6286 MJH6287
(1) Pulse test: Pulse Width = 300 s, Duty Cycle = 2.0%. SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
V1 APPROX - 8.0 V
V2 APPROX +12 V
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPES, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA
Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 40 mAdc) Collector-Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc)
Fall Time
Storage Time
Rise Time
Delay Time
Small-Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Current-Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Base-Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc)
Base-Emitter On Voltage (IC = 10 Adc, VCE = 3.0 Vdc)
DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc) DC Current Gain (IC = 20 Adc, VCE = 3.0 Vdc)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
Collector Cutoff Current (VCE = Rated VCB, VBE(off) = 1.5 Vdc) (VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C)
Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0)
Collector-Emitter Sustaining Voltage (IC = 0.1 Adc, IB = 0)
2
tr, tf, 10 ns DUTY CYCLE = 1.0% 0 For NPN test circuit reverse diode and voltage polarities.
Figure 2. Switching Times Test Circuit
25 s
VCC = 30 Vdc, IC = 10 Adc IB1 = IB2 = 100 mA Duty Cycle = 1.0%
51
RB
D1
+ 4.0 V
Resistive Load
Characteristic
for td and tr, D1 is disconnected and V2 = 0
8.0 k
TUT
50
VCC - 30 V
RC SCOPE
MJH6282, MJH6285 MJH6283, MJH6286 MJH6284, MJH6287
MJH6282, MJH6285 MJH6283, MJH6286 MJH6284, MJH6287
MJH6282, 83, 84 MJH6285, 86, 87
BASE
NPN MJH6282 MJH6283 MJH6284
Motorola Bipolar Power Transistor Device Data Figure 3. Darlington Schematic
COLLECTOR VCEO(sus) EMITTER VCE(sat) VBE(sat) VBE(on) Symbol Symbol ICEO IEBO ICEX Cob hFE hfe fT td ts tr tf BASE NPN Min 60 80 100 300 750 100 3.5 1.0 0.3 0.1 4.0 -- -- -- -- -- -- -- -- -- -- -- -- Typical PNP MJH6285 MJH6286 MJH6287 18,000 -- PNP Max 400 600 2.0 1.0 0.3 0.1 4.0 2.8 2.0 3.0 2.0 0.5 5.0 1.0 1.0 1.0 -- -- -- -- -- COLLECTOR EMITTER mAdc mAdc mAdc MHz Unit Unit Vdc Vdc Vdc Vdc pF -- -- s
MJH6282 MJH6283 MJH6284 MJH6285 MJH6286 MJH6287
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.05 0.02 0.01 SINGLE PULSE RJC(t) = r(t) RJC RJC = 0.78C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 P(pk) D = 0.5 0.2
t1
t2
DUTY CYCLE, D = t1/t2 100 200 300 500 1000
0.02 0.03
0.05
Figure 4. Thermal Response
FBSOA, FORWARD BIAS SAFE OPERATING AREA
50 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 5.0 10 50 2.0 20 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 150C
SECOND BREAKDOWN LIMIT BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25C SINGLE PULSE
50 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 2.0 5.0 10 20 50 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPS) 0.1 ms 0.5 ms 1.0 ms 5.0 ms dc 0.1 ms 0.5 ms 1.0 ms 5.0 ms dc TJ = 150C
SECOND BREAKDOWN LIMIT BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25C SINGLE PULSE
50 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 5.0 10 20 50 100 2.0 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 150C
SECOND BREAKDOWN LIMIT BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25C SINGLE PULSE
0.1 ms 0.5 ms 1.0 ms 5.0 ms dc
Figure 5. MJH6282, MJH6285
Figure 6. MJH6283, MJH6286
Figure 7. MJH6284, MJH6287
50 IC, COLLECTOR CURRENT (AMPS)
40
L = 200 H IC/IB 100 TC = 25C VBE(off) = 0 - 5.0 V RBE = 47 DUTY CYCLE = 10%
FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5, 6 and 7 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150 _C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
30
20 MJH6282, 6285 MJH6283, 6286 MJH6284, 6287
10
v
0
0
30 100 60 10 20 40 80 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
110
Figure 8. Maximum RBSOA, Reverse Bias Safe Operating Area
Motorola Bipolar Power Transistor Device Data
3
MJH6282 MJH6283 MJH6284 MJH6285 MJH6286 MJH6287
NPN
3000 2000 hFE, DC CURRENT GAIN VCE = 3.0 V hFE, DC CURRENT GAIN TJ = 150C 1000 25C 500 300 200 150 0.2 0.3 0.5 - 55C 1.0 2.0 3.0 5.0 7.0 10 20 3000 2000 5000 VCE = 3.0 V TJ = 150C 25C
PNP
1000 700 500 300 0.2 - 55C
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 9. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 1.0 2.0 3.0 5.0 10 20 30 IC = 5.0 A 50 100 200 300 500 1000 IC = 10 A IC = 15 A TJ = 25C
2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 1.0 2.0 3.0 5.0 10 20 30 50 IC = 5.0 A 100 200 300 500 1000 IC = 10 A IC = 15 A
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 10. Collector Saturation Region
3.0 TJ = 25C V, VOLTAGE (VOLTS)
3.0 TJ = 25C
2.5 V, VOLTAGE (VOLTS)
2.5
2.0 VBE @ VCE = 3.0 V VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
2.0 VBE(sat) @ IC/IB = 250 1.5 VBE(on) @ VCE = 3.0 V
1.5
1.0
1.0 VCE(sat) @ IC/IB = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 11. "On" Voltages
4
Motorola Bipolar Power Transistor Device Data
MJH6282 MJH6283 MJH6284 MJH6285 MJH6286 MJH6287
PACKAGE DIMENSIONS
C B Q E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN MAX 19.00 19.60 14.00 14.50 4.20 4.70 1.00 1.30 1.45 1.65 5.21 5.72 2.60 3.00 0.40 0.60 28.50 32.00 14.70 15.30 4.00 4.25 17.50 18.10 3.40 3.80 1.50 2.00 BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX 0.749 0.771 0.551 0.570 0.165 0.185 0.040 0.051 0.058 0.064 0.206 0.225 0.103 0.118 0.016 0.023 1.123 1.259 0.579 0.602 0.158 0.167 0.689 0.712 0.134 0.149 0.060 0.078
U S K L
1 2
4
A
3
DIM A B C D E G H J K L Q S U V
D V G
J H
STYLE 1: PIN 1. 2. 3. 4.
CASE 340D-01 ISSUE A
Motorola Bipolar Power Transistor Device Data
5
MJH6282 MJH6283 MJH6284 MJH6285 MJH6286 MJH6287
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com
JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
6
Motorola Bipolar Power Transistor Device Data
*MJH6282/D*
MJH6282/D

▲Up To Search▲

Price & Availability of MJH6284

	To Download MJH6284 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .